User Project Details

GaPSi

From Molecules to Thin Films - GaP Nucleation on Si Substrates

Chemistry

Universität Leipzig

Wilhelm-Ostwald-Institut für Physikalische und Theoretische Chemie

We continue to investigate the functionalization of semiconductor surfaces like silicon, germanium and gallium arsenide by computational chemistry approaches. In addition, we explore reaction mechanisms in the area-selective atomic layer deposition. Based on our previous success, we significantly extend the scope of the project toward automatization approaches and further relevant surface functionalization approaches including organic/inorganic interfaces.